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Atomic-Scale Dopant Transition Control And 300 mm Heavy Epitaxy Reshape Industry Trends
The commercial emergence of atomic-scale dopant transition control, ultra-thick epitaxial layer architectures, and low-temperature epitaxy processes represents one of the most defining Silicon Epi Wafer Market Trends. Historically, growing an epitaxial layer over a heavily doped substrate caused an undesirable physical phenomenon known as "autodoping." During high-temperature CVD processing,...
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